? 2000 ixys all rights reserved 1 - 2 features international standard package with dcb ceramic base plate planar passivated chips short recovery time low switching losses soft recovery behaviour isolation voltage 3600 v~ ul registered e 72873 applications antiparallel diode for high frequency switching devices free wheeling diode in converters and motor control circuits inductive heating and melting uninterruptible power supplies (ups) ultrasonic cleaners and welders advantages high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching low losses dimensions in mm (1 mm = 0.0394") 0.53 1.29 75 503 75 356 1800 3000 3600 -40...+150 -40...+125 110 28800 29300 23300 23800 2400 2640 2160 2380 150 12.7 9.6 50 2.25-2.75/20-25 4.50-5.50/40-48 150 0.80 0.98 260 0.92 1.07 0.228 0.143 3 2 80 i favm rating includes reverse blocking losses at t vjm , v r = 0.6 v rrm , duty cycle d = 0.5 data according to iec 60747 ixys reserves the right to change limits, test conditions and dimensions 300 150 200 100 9 200 15 911 875 123 v rsm v rrm type v v 200 200 mek 350-02da symbol test conditions maximum ratings i frms t c = ca i favm ?? t c = c; rectangular, d = 0.5 a i frm t p < 10 s; rep. rating, pulse width limited by t vjm a i fsm t vj = 45 c; t = 10 ms (50 hz), sine a t = 8.3 ms (60 hz), sine a t vj = 150 c; t = 10 ms (50 hz), sine a t = 8.3 ms (60 hz), sine a i 2 t t vj = 45 c; t = 10 ms (50 hz), sine a 2 s t = 8.3 ms (60 hz), sine a 2 s t vj = 150 c; t = 10 ms (50 hz), sine a 2 s t = 8.3 ms (60 hz), sine a 2 s t vj c t stg c t smax c p tot t c = 25 cw v isol 50/60 hz, rms t = 1 min v~ i isol 1 ma t = 1 s v~ m d mounting torque (m6) nm/lb.in. terminal connection torque (m6) nm/lb.in. d s creeping distance on surface mm d a strike distance through air mm a maximum allowable acceleration m/s 2 weight g symbol test conditions characteristic values (per diode) typ. max. i r t vj = 25 cv r = v rrm ma t vj = 25 cv r = 0.8 ? v rrm ma t vj = 125 cv r = 0.8 v rrm ma v f i f = a; t vj = 125 cv t vj =25 cv i f = a; t vj = 125 cv t vj =25 cv v t0 for power-loss calculations only v r t m r thjh dc current k/w r thjc dc current k/w t rr i f = a t vj = 100 cns i rm v r = v t vj = 25 ca -di/dt = a/ st vj = 100 ca fast recovery epitaxial diode (fred) module mek 350-02 da v rrm = 200 v i favm = 356 a t rr = 150 ns 1 2 3
? 2000 ixys all rights reserved 2 - 2 mek 350-02 da 200 600 1000 0 400 800 80 120 160 200 240 280 0.001 0.01 0.1 1 10 0.00 0.05 0.10 0.15 0.20 0.25 0 50 100 150 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 400 800 1200 10 30 50 70 90 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v fr di f /dt 200 600 1000 0 400 800 10 30 50 0 20 40 60 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.4 0.8 1.2 0 50 100 150 200 250 300 350 400 i rm q r i f a v f -di f /dt -di f /dt a/ m s a v c a/ m s a/ m s t rr ns t fr z thjs a/ m s s v fig. 7 transient thermal impedance junction to heatsink t vj = 100 c v r = 100v t vj = 125 c i f = 350a constants for z thjs calculation: ir thi (k/w) t i (s) 1 0.002 0.08 2 0.008 0.024 3 0.054 0.112 4 0.164 0.464 fig. 3 peak reverse current i rm versus -di f /dt fig. 2 reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus voltage drop v f per leg t vj = 100 c v r = 100v t vj = 100 c v r = 100v q r i rm fig. 4 dynamic parameters q r , i rm versus junction temperature t vj fig. 5 recovery time t rr versus -di f /dt fig. 6 peak forward voltage v fr and t fr versus di f /dt t vj =125 c t vj =25 c i f = 700a i f = 350a i f = 175a i f = 700a i f = 350a i f = 175a i f = 700a i f = 350a i f = 175a v fr t fr z thjh
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